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参数资料
| 型号： | FDR8702H |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFET |
| 中文描述： | 3600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 6/8页 |
| 文件大小： | 200K |
| 代理商： | FDR8702H |
FDR8702H Rev C (W)
Typical Characteristics : Q2
0
1
2
3
4
5
6
7
8
9
0
1
2
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-1.5V
-2.5V
-2.0V
-3.5V
V
GS
= -4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
1
2
3
4
5
6
7
8
9
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -2.0V
-2.5V
-3.5V
-4.5V
-3.0V
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.6A
V
GS
= -4.5V
0.04
0.08
0.12
0.16
0.2
0.24
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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