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参数资料
| 型号： | FDS2070N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4100 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 200K |
| 代理商： | FDS2070N3 |
FDS2070N7 Rev C2(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 75 V, I
D
= 4.1 A
370
4.1
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 120 V, V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= 250
μ
A
150
V
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
154
mV/
°
C
μ
A
nA
nA
1
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 4.1 A
V
GS
= 6.0V, I
D
= 3.8 A
V
GS
= 10 V, I
D
= 4.1 A,T
J
= 125
°
C
V
DS
= 10 V, I
D
= 4.1 A
I
D
= 250
μ
A
2
2.6
–7
57
60
111
24
4
V
mV/
°
C
m
S
78
88
160
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1884
102
35
1.6
pF
pF
pF
V
DS
= 75 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
6
40
20
38
8
11
20
12
64
36
53
ns
ns
ns
ns
nC
nC
nC
V
DD
= 75 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 75 V, I
D
= 4.1 A,
V
GS
= 10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2.5
1.2
A
V
nS
nC
V
SD
V
GS
= 0 V,
I
F
= 4.1A
d
iF
/d
t
= 100 A/μs
I
S
= 2.5 A
(Note 2)
0.75
75
404
(Note 2)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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