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参数资料
| 型号： | FDS2572 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET |
| 中文描述： | 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 11/12页 |
| 文件大小： | 273K |
| 代理商： | FDS2572 |
2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
F
MS-012AA
8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE
MS-012AA
12mm TAPE AND REEL
A
A
1
E
E
1
e
b
D
L
h x 45
o
2
0
o
-8
o
c
0.004 IN
0.10 mm
5
6
0.155
4.0
0.275
7.0
0.050
1.27
0.024
0.6
0.060
1.52
MINIMUM RECOMMENDED FOOTPRINT FOR
SURFACE-MOUNTED APPLICATIONS
1
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.0532
0.0688
1.35
1.75
-
A
1
0.004
0.0098
0.10
0.25
-
b
0.013
0.020
0.33
0.51
-
c
0.0075
0.0098
0.19
0.25
-
D
0.189
0.1968
4.80
5.00
2
E
0.2284
0.244
5.80
6.20
-
E
1
0.1497
0.1574
3.80
4.00
3
e
0.050 BSC
1.27 BSC
-
H
0.0099
0.0196
0.25
0.50
-
L
0.016
0.050
0.40
1.27
4
NOTES:
1. All dimensions are within allowable dimensions of
Rev. C of JEDEC MS-012AA outline dated 5-90.
2. Dimension “D” does not include mold flash, protru-
sions or gate burrs. Mold flash, protrusions or gate
burrs shall not exceed 0.006 inches (0.15mm) per
side.
3. Dimension “E
1
” does not include inter-lead flash or
protrusions. Inter-lead flash and protrusions shall
not exceed 0.010 inches (0.25mm) per side.
4. “L” is the length of terminal for soldering.
5. The chamfer on the body is optional. If it is not
present, a visual index feature must be located with-
in the crosshatched area.
6. Controlling dimension: Millimeter.
7. Revision 8 dated 5-99.
USER DIRECTION OF FEED
L
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
8.0mm
12mm
COVER TAPE
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
330mm
50mm
13mm
18.4mm
12.4mm
ACCESS HOLE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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