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参数资料
| 型号： | FDS2572 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET |
| 中文描述： | 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 273K |
| 代理商： | FDS2572 |
2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
F
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristic
(Continued)
10
100
1000
0.1
1
10
150
5000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
GS
=
0V, f
=
1MHz
0
2
4
6
8
10
0
5
10
15
20
25
30
35
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 75V
I
D
= 4.9A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
Test Circuits and Waveforms
Figure 13. Unclamped Energy Test Circuit
Figure 14. Unclamped Energy Waveforms
Figure 15. Gate Charge Test Circuit
Figure 16. Gate Charge Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
D1
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
Q
gs2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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