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参数资料
| 型号： | FDS2582 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 12 AMP MINIATURE POWER RELAY |
| 中文描述： | 4.1 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/11页 |
| 文件大小： | 283K |
| 代理商： | FDS2582 |
2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B
F
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25
°
C, L = 56mH, I
= 3A.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
CA
is determined by the user
’
s board design.
3:
R
θ
JA
is measured with 1.0 in
copper on FR-4 board
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 120V
V
GS
= 0V
V
GS
=
±
20V
150
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 4.1A, V
GS
= 10V
I
D
= 2A, V
GS
= 6V
I
D
= 4.1A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.057
0.065
0.066
0.098
-
0.125
0.146
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1290
150
32
19
2.3
5.4
3.1
4.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V
I
D
= 4.1A
I
g
= 1.0mA
25
3.0
-
-
-
V
DD
= 75V, I
D
= 4.1A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
-
45
-
-
-
-
92
ns
ns
ns
ns
ns
ns
11
19
36
26
-
V
SD
Source to Drain Diode Voltage
I
SD
= 4.1A
I
SD
= 2A
I
SD
= 4.1A, dI
SD
/dt= 100A/
μ
s
I
SD
= 4.1A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
63
116
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2670 | 功能描述:MOSFET SO-8 N-CH 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
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