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参数资料
| 型号： | FDS2734 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm |
| 中文描述： | 3 A, 250 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 375K |
| 代理商： | FDS2734 |
F
FDS2734 Rev. B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
(Note 2)
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
250
V
I
D
= 250
μ
A, referenced to 25
o
C
157
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200V,V
GS
=0 V
V
DS
= 200V, V
GS
= 0V T
J
= 55
o
C
V
GS
=
±
20V, V
DS
=0 V
1
10
μ
A
I
GSS
Gate to Source Leakage Current
±
100
nA
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
2
3
4
V
I
D
= 250
μ
A, referenced to 25
o
C
-10.7
mV/
c
r
DS(
on
)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 3.0A,
V
GS
= 6V , I
D
= 2.8A,
V
GS
= 10V, I
D
= 3.0A, T
J
= 125
o
C
V
DS
=10V, I
D
=3.0A,
97
101
205
15.1
117
126
225
m
g
FS
Forward Transconductance
S
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 100V, V
GS
= 0V,
f = 1MHz
1960
85
26
0.7
2610
130
40
pF
pF
pF
f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V
DD
= 125V, I
D
= 3A
V
GS
= 10V, R
GS
= 6
23
11
40
11
32
9
8
37
19
64
19
45
ns
ns
ns
ns
nC
nC
nC
V
DS
= 125V, V
GS
= 10V
I
D
= 3.0A
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 3.0A
I
F
= 3.0 A, d
iF
/dt = 100A/
μ
s
0.74
72
185
1.2
108
278
V
ns
nC
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by the user’s board design.
2:
Pulse Test Width <300
μ
s,
Duty Cycle <2%
.
3:
Starting T
J
= 25
°
C, L = 1mH, I
AS
= 5A, V
DD
= 100V, V
GS
= 10V
b) 125
°
C/W when
mounted on a minimum
pad of 2 oz copper
Scale 1 : 1 on letter size paper
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
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