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参数资料
| 型号： | FDS2734 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm |
| 中文描述： | 3 A, 250 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8 |
| 文件页数： | 4/6页 |
| 文件大小： | 375K |
| 代理商： | FDS2734 |
F
FDS2734 Rev. B
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
V
DD
= 200V
V
DD
= 50V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 125V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
100
1000
C
5000
Ciss
Coss
f = 1MHz
V
GS
= 0V
Crss
V
DS
,DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
1E-3
0.01
0.1
1
10
100
0.1
1
10
T
J
= 125
o
C
T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (mS)
Figure 10.
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 10V
V
GS
= 6V
I
D
,
T
A
, AMBIENT TEMPERATURE
(
o
C
)
R
θ
JA
= 50
o
C
/W
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 11.
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
10
2
10us
10ms
100ms
1s
1ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
I
D
,
Figure 12. Single Pulse Maximum Power
Dissipation
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-------125
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
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