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参数资料
| 型号： | FDS4072N7 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 40V N-Channel PowerTrench MOSFET |
| 中文描述： | 12.4 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 191K |
| 代理商： | FDS4072N7 |
FDS4072N3 Rev B1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Single Pulse, V
DD
= 20V, I
D
=12.4 A
200
12.4
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
I
D
= 250
μ
A
40
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 32 V,
V
GS
= 12 V,
V
GS
= –12 V ,
38
mV/
°
C
μ
A
nA
nA
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 12.4 A
V
GS
= 10 V, I
D
= 13.7 A
V
GS
= 4.5 V, I
D
= 12.4 A,T
J
= 125
°
C
V
GS
= 5 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 12.4 A
I
D
= 250
μ
A
1
1.3
–4.5
9.7
8.5
14.7
84
3
V
Gate Threshold Voltage
mV/
°
C
m
12
10
20
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
30
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
4299
351
149
pF
pF
pF
V
DS
= 20 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
20
12
52
18
33
7.8
8.1
36
22
83
32
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 20 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 20 V,
V
GS
= 4.5 V
I
D
= 12.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2.5
A
V
SD
V
GS
= 0 V,
I
S
= 2.5 A
(Note 2)
0.7
1.2
V
30
90
nS
nC
I
F
= 12.4 A,
d
iF
/d
t
= 100 A/μs
F
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| FDS4072N7_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench MOSFET |
| FDS4080N3 | 功能描述:MOSFET 40V N-Ch PowerTrench FLMP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4080N3_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel FLMP PowerTrench MOSFET |
| FDS4080N7 | 功能描述:MOSFET 40V N-Ch PowerTrench FLMP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4080N7_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel FLMP PowerTrench MOSFET |
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