参数资料
型号: FDS4410
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
中文描述: 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 1/8页
文件大小: 241K
代理商: FDS4410
FDS4410
Single N-Channel Logic Level PWM Optimized PowerTrench
TM
MOSFET
General Description Features
April 1998
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS4410
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
10
A
- Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDS4410 Rev.B1
10 A, 30 V. R
DS(ON)
= 0.0135
@ V
GS
= 10 V
R
DS(ON)
= 0.0200
@ V
GS
= 4.5 V.
Optimized for use in switching DC/DC converters
with PWM controllers.
Very fast switching .
Low gate charge (typical 22 nC).
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
1
6
7
8
2
4
3
5
S
D
S
S
SO-8
D
D
D
G
pin
1
FDS
4410
1998 Fairchild Semiconductor Corporation
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相关代理商/技术参数
参数描述
FDS4410_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin SOIC N
FDS4410A 功能描述:MOSFET LOGIC LEVEL PO SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS4435 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS4435 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL
FDS4435 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8