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参数资料
| 型号： | FDS4410 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 241K |
| 代理商： | FDS4410 |
FDS4410 Rev.B1
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
3.5V
5.0V
4.5V
4.0V
6.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 10 V
I = 10 A
R
D
Figure 3. On-Resistance Variation with
Temperature
.
2
3
4
5
0
10
20
30
40
50
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5V
DS
A
Figure 5 . Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
50
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
GS
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4 . On-Resistance
Variation with
Gate-to-Source Voltage.
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
A
I = 5A
T = 125°C
A
0
10
20
30
40
50
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 3.5V
10V
4.0V
4.5V
5.5V
7.0V
R
D
)
5.0V
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4435 | P-Channel Logic Level PowerTrenchTM MOSFET |
| FDS4435A | P-Channel Logic Level PowerTrench⑩MOSFET |
| FDS4435BZ | 30 Volt P-Channel PowerTrench MOSFET |
| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDS4470 | 40V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4410_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin SOIC N |
| FDS4410A | 功能描述:MOSFET LOGIC LEVEL PO SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
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