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参数资料
| 型号： | FDS4410 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 241K |
| 代理商： | FDS4410 |
FDS4410 Rev.B1
0
5
10
15
20
25
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 10A
10V
15V
V = 5V
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical And Thermal Characteristics
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 125°C/W
T - T = P * R JA
P(pk)
t
1
t
2
0.1
0.5
1
2
5
10
30
100
200
500
1000
2000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
0.05
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.1
0.5
3
10
30
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =125°C/W
T = 25°C
A
DC
1s
10ms
100ms
1ms
100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =125° C/W
T = 25°C
θ
JA
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|---|---|
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| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDS4470 | 40V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4410_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin SOIC N |
| FDS4410A | 功能描述:MOSFET LOGIC LEVEL PO SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
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