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参数资料
| 型号： | FDS4410A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel, Logic-Level, PowerTrench MOSFET |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 112K |
| 代理商： | FDS4410A |
2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com
May 2005
F
FDS4410A
Single N
-
Channel, Logic-Level, PowerTrench
MOSFET
Features
■
10 A, 30 V.
R
R
DS(ON)
DS(ON)
= 13.5 m
= 20 m
@ V
@ V
GS
= 4.5 V
= 10 V
GS
■
Fast switching speed
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
■
■
■
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain–Source Voltage
30
V
V
GSS
Gate–Source Voltage
±
20
V
I
D
Drain Current
– Continuous
(Note 1a)
10
A
– Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
(Note 1b)
125
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4410A
FDS4410A
13"
12mm
2500 units
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
5
3
6
2
7
1
8
相关PDF资料 |
PDF描述 |
|---|---|
| FDS4410 | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| FDS4435 | P-Channel Logic Level PowerTrenchTM MOSFET |
| FDS4435A | P-Channel Logic Level PowerTrench⑩MOSFET |
| FDS4435BZ | 30 Volt P-Channel PowerTrench MOSFET |
| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS4435_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET |
| FDS4435_NL | 功能描述:MOSFET P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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