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| 型号： | FDS5690 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 7A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1107pF @ 30V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS5690DKR |
March 2000
FDS5690
60V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
?
DC/DC converter
?
Motor drives
?
?
?
?
?
7 A, 60 V. R DS(on) = 0.028 ? @ V GS = 10 V
R DS(on) = 0.033 ? @ V GS = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
High power and current handling capability.
D
D
D
D
5
6
4
3
7
2
SO-8
S
S
S
G
8
1
Absolute Maximum Ratings
T A = 25 ° C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
7
A
- Pulsed
50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
FDS5690
Device
FDS5690
Reel Size
13 ’’
Tape Width
12mm
Quantity
2500 units
? 2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS5690_NBBM009A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 7A 8SOIC |
| FDS5692Z | 功能描述:MOSFET 50V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS60 | 制造商:Hubbell Wiring Device-Kellems 功能描述:FUSED DISCO SW, 3P, 60A |
| FDS6064N3 | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6064N7 | 功能描述:MOSFET SO-8 N-CH 20V 23A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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