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| 型号： | FDS6673BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 14.5A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.8 毫欧 @ 14.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 124nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4700pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS6673BZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
B VDSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 A, V GS = 0V
I D = -250 A, referenced to
25°C
V DS = -24V, V GS = 0V
V GS = ±25V, V DS = 0V
-30
-20
-1
±10
V
mV/°C
A
A
On Characteristics (Note 2)
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 A
I D = -250 A, referenced to
25°C
-1
-1.9
8.1
-3
V
mV/°C
V GS = -10V , I D = -14.5A
6.5
7.8
r DS(on)
g FS
Drain to Source On Resistance
Forward Transconductance
V GS = -4.5V, I D = -12A
V GS = -10V, I D = -14.5A
T J = 125 o C
V DS = -5V, I D = -14.5A
9.6
9.7
60
12
12
m
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15V, V GS = 0V,
f = 1.0MHz
3500
600
600
4700
800
900
pF
pF
pF
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V DD = -15V, I D = -1A
V GS = -10V, R GS = 6
V DS = -15V, V GS = -10V,
I D = -14.5A
V DS = -15V, V GS = -5V,
I D = -14.5A
1 4
16
2 25
105
88
46
8
23.5
2 6
29
3 6
167
124
65
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = -2.1A
-0.7
-1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 14.5A, di/dt = 100A/ s
I F = 14.5A, di/dt = 100A/ s
45
34
ns
nC
Notes:
1: R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R JC is guaranteed by design while R CA is determined by the user ’s board design.
a) 50 o C/W (10 sec)
when mounted on a 1 in 2
pad of 2 oz copper
b) 105 o C/W when mounted
on a .04 in 2 pad of 2 oz
copper
c) 125 o C/W when mounted
on a minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6673BZ Rev. B 2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6673BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 14.5mA 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 14.5mA |
| FDS6673BZ_F085 | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6673BZ_G | 制造商:Fairchild 功能描述:-30V P-Channel PowerTrench? MOSFET |
| FDS6675 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
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