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| 型号： | FDS6680AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS6680ASDKR |
May 200 8
FDS6680AS
30V N - Channel PowerTrench ? SyncFET ?
tm
General Description
Features
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
?
11.5 A, 30 V.
R DS(ON) max= 10.0 m ? @ V GS = 10 V
R DS(ON) max= 12.5 m ? @ V GS = 4.5 V
maximize power conversion efficiency, providing a low
R DS(ON) and low gate charge. The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
Applications
? DC/DC converter
? Low side notebooks
?
?
?
?
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High performance trench technology for extremely low
R DS(ON) and fast switching
High power and current handling capability
D
D
D
D
5
6
4
3
SO-8
S
S
S
G
7
8
2
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
11.5
A
– Pulsed
50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6680AS
Device
FDS6680AS
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 200 8 Fairchild Semiconductor Corporation
FDS6680AS Rev B 2 (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6680A | MOSFET N-CH 30V 12.5A 8-SOIC |
| FDS6681Z | MOSFET P-CH 30V 20A SO-8 |
| FDS6682 | MOSFET N-CH 30V 14A 8SOIC |
| FDS6690AS | MOSFET N-CH 30V 10A 8SOIC |
| FDS6690A | MOSFET N-CH 30V 11A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6680AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680S | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680S_D84Z | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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