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| 型号： | FDS6680A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 12.5A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1620pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS6680ADKR |
November 2004
July 2012
FDS6680A
Single N-Channel, Logic Level, PowerTrench ? MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
? 12.5 A, 30 V
R DS(ON) = 9.5 m ? @ V GS = 10 V
R DS(ON) = 13 m ? @ V GS = 4.5 V
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
? Ultra-low gate charge
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D D
D D
D D
D D
5
6
4
3
7
2
S S S
S S G
SO-8
Pin 1 SO-8
S
G
8
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
I D
Drain Current
– Continuous
(Note 1a)
12.5
A
– Pulsed
50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
Package Marking and Ordering Information
Device Marking
FDS6680A
Device
FDS6680A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2012 Fairchild Semiconductor Corporation
FDS6680A Rev F2(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6681Z | MOSFET P-CH 30V 20A SO-8 |
| FDS6682 | MOSFET N-CH 30V 14A 8SOIC |
| FDS6690AS | MOSFET N-CH 30V 10A 8SOIC |
| FDS6690A | MOSFET N-CH 30V 11A 8-SOIC |
| FDS6692A | MOSFET N-CH 30V 9A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6680A_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench?? MOSFET |
| FDS6680A_Q | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6680A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6680A Series N-Channel 30 V 9.5 mOhm Logic Level PowerTrench Mosfet -SOIC-8 |
| FDS6680AS | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6680AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
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