参数资料
型号: FDS6680A
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 30V 12.5A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 12.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 23nC @ 5V
输入电容 (Ciss) @ Vds: 1620pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDS6680ADKR
Typical Characteristics
50
V GS = 10V
4.0V
2.2
2
40
6.0V
4.5V
3.5V
1.8
V GS = 3.5V
30
1.6
20
1.4
4.0V
10
1.2
4.5V
5.0V
6.0V
0
3.0V
1
0.8
10V
0
0.5 1 1.5
2
0
10
20 30
40
50
1.6
1.4
1.2
1
0.8
0.6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D = 12.5A
V GS = 10V
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.03
I D = 6.2A
0.025
0.02
T A = 125 o C
0.015
0.01
T A = 25 o C
0.005
-50
-25
0 25 50 75 100
T J , JUNCTION TEMPERATURE ( o C)
125
150
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
50
Figure 3. On-Resist ance Variation with
Temperature.
V DS = 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V GS = 0V
40
30
10
1
T A = 125 o C
25 o C
-55 C
20
10
0
T A = 125 o C
25 o C
o
0.1
0.01
0.001
0.0001
-55 o C
1.5
2
2.5 3 3.5
4
0
0.2 0.4 0.6 0.8 1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680A Rev F2(W)
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