- 您现在的位置：买卖IC网 > Datasheet目录426 > FDS6680AS (Fairchild Semiconductor)MOSFET N-CH 30V 11.5A 8SOIC Datasheet资料下载
参数资料
| 型号： | FDS6680AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS6680ASDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
I D = 1 0 mA, Referenced to 25 ° C
30
2 6
V
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
500
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = 1 mA
I D = 1 0 mA, Referenced to 25 ° C
V GS = 10 V, I D = 11.5 A
1
1.5
– 4
8.4
3
10.0
V
mV/ ° C
m ?
On–Resistance
V GS = 4.5 V, I D = 9.5 A
V GS =10 V, I D =11.5A, T J =125 ° C
10.3
12.3
12.5
15.5
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 15 V,
V DS = 5 V
I D = 11.5 A
50
48
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
1240
350
120
1.4
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
9
18
ns
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q g (TOT)
Q g
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
V DS = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 4.5 V,
V DD = 15 V,
I D = 1 A,
R GEN = 6 ?
I D = 1 A,
R GEN = 6 ?
I D = 11.5 A,
5
27
11
11
12
18
11
22
12
10
42
21
20
22
32
20
30
16
ns
ns
ns
ns
ns
ns
ns
nC
nC
Q gs
Q gd
Gate–Source Charge
Gate–Drain Charge
3.5
3.4
nC
nC
FDS6680AS Rev B 2 (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6680A | MOSFET N-CH 30V 12.5A 8-SOIC |
| FDS6681Z | MOSFET P-CH 30V 20A SO-8 |
| FDS6682 | MOSFET N-CH 30V 14A 8SOIC |
| FDS6690AS | MOSFET N-CH 30V 10A 8SOIC |
| FDS6690A | MOSFET N-CH 30V 11A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6680AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680S | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680S_D84Z | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。