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参数资料
| 型号： | FDS6898AZ_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V DUAL 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1821pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS6898AZ_F085DKR |
February 20 10
FDS6898AZ_F085
Dual N-Channel Logic Level PWM Optimized PowerTrench ? MOSFET
tm
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
? 9.4 A, 20 V R DS(ON) = 14 m ? @ V GS = 4.5 V
R DS(ON) = 18 m ? @ V GS = 2.5 V
? Low gate charge (16 nC typical)
? ESD protection diode (note 3)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
? Qualified to AEC Q101
? RoHS Compliant
D D1
D D2
D D2
D D1
5
6
Q1
4
3
S2 S
S1 G
SO-8
Pin 1 SO-8
S
G2
G1
S
7
8
Q2
2
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
9.4
A
– Pulsed
38
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking Device Reel Size
Tape width
Quantity
FDS6898AZ
FDS6898AZ_F085
13’’
12mm
2500 units
?20 10 Fairchild Semiconductor Corporation
FDS 6898AZ _F085 Rev. A
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6898AZ | MOSFET N-CH DUAL 20V 9.4A 8SOIC |
| FDS6900AS | MOSFET N-CH DUAL 30V 8SOIC |
| FDS6910 | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6911 | MOSFET N-CH DUAL 20V 7.5A 8-SOIC |
| FDS6912 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6900AS | 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6900AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Ch PowerTrench SyncFET |
| FDS6900S | 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910 | 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
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