- 您现在的位置：买卖IC网 > Datasheet目录427 > FDS6900AS (Fairchild Semiconductor)MOSFET N-CH DUAL 30V 8SOIC Datasheet资料下载
参数资料
| 型号： | FDS6900AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A，8.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
May 2005
FDS6900AS
Dual N-Ch PowerTrench ? SyncFET ?
General Description
Features
The FDS6900AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC
?
Q2 :
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900AS contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
8.2A, 30V
R DS(on) = 22m ? @ V GS = 10V
R DS(on) = 28m ? @ V GS = 4.5V
designed to maximize power conversion efficiency.
?
Q1 :
Optimized for low switching losses
R DS(on) = 27m ? @ V GS = 10V
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
Low Gate Charge (11nC typical)
6.9A, 30V
R DS(on) = 34m ? @ V GS = 4.5V
using Fairchild’s monolithic SyncFET technology.
?
100% R G (Gate Resistance) Tested
D
D
S1D2
S1D2
D G1
S1D2
1
2
3
Q1
8
7
6
Q2
D1 S
G2 G
SO-8
Pin 1
SO-
S
D1
S2
S
4
Dual N-Channel SyncFet
5
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q2
30
± 20
Q1
30
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
8.2
6.9
A
- Pulsed
30
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6900AS
FDS6900AS
Device
FDS6900AS
FDS6900AS_NL (Note 4)
Reel Size
13”
13”
Tape width
12mm
12mm
Quantity
2500 units
2500 units
? 2005 Fairchild Semiconductor Corporation
FDS6900AS Rev B (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6910 | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6911 | MOSFET N-CH DUAL 20V 7.5A 8-SOIC |
| FDS6912 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
| FDS6930A | MOSFET N-CH DUAL 30V 5.5A 8SOIC |
| FDS6930B | MOSFET N-CH DUAL 30V 5.5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6900AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Ch PowerTrench SyncFET |
| FDS6900S | 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910 | 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。