- 您现在的位置：买卖IC网 > Datasheet目录427 > FDS6900AS (Fairchild Semiconductor)MOSFET N-CH DUAL 30V 8SOIC Datasheet资料下载
参数资料
| 型号： | FDS6900AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A，8.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
(Note 2)
Q g (TOT)
Q g
Q gs
Q gd
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Q2:
V DS = 15 V, I D = 8.2A
Q1:
V DS = 15 V, I D = 6.9A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
11
5.8
6.1
1.6
1.7
2.1
2.2
15
15
8.2
8.5
nC
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
Q2
2.3
A
Q1
1.3
T rr
Q rr
T rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I F = 8.2 A,
d iF /d t = 300 A/μs
I F = 6.9 A,
d iF /d t = 100 A/μs
(Note 3)
(Note 3)
Q2
Q1
15
6
19
10
ns
nC
ns
nC
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 2.3 A
V GS = 0 V, I S = 5 A
V GS = 0 V, I S = 1.3 A
(Note 2)
(Note 2)
(Note 2)
Q2
Q2
Q1
0.6
0.7
0.7
0.7
1.0
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
78°C/W when
b)
125°C/W when
c)
135°C/W when
0.5in pad of 2
mounted on a
2
oz copper
mounted on a
0.02 in 2 pad of
2 oz copper
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label.
FDS6900AS Rev B (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6910 | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6911 | MOSFET N-CH DUAL 20V 7.5A 8-SOIC |
| FDS6912 | MOSFET N-CH DUAL PWM OPT 8-SOIC |
| FDS6930A | MOSFET N-CH DUAL 30V 5.5A 8SOIC |
| FDS6930B | MOSFET N-CH DUAL 30V 5.5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6900AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Ch PowerTrench SyncFET |
| FDS6900S | 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910 | 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。