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| 型号： | FDS6912 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL PWM OPT 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 740pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
July 2000
FDS6912
Dual N-Channel Logic Level PWM Optimized PowerTrench ? MOSFET
General Description
These N-Channel Logic Level MOSFETs have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D1
Features
? 6 A, 30 V. R DS(ON) = 0.028 ? @ V GS = 10 V
R DS(ON) = 0.042 ? @ V GS = 4.5 V.
? Optimized for use in switching DC/DC converters
with PWM controllers
? Very fast switching.
? Low gate charge
D1
5
4
D2
D2
6
Q1
3
7
2
SO-8
S2
G2
S1
G1
8
Q2
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 25
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
6
A
– Pulsed
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6912
Device
FDS6912
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2000 Fairchild Semiconductor Corporation
FDS6912 Rev F (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6930A | MOSFET N-CH DUAL 30V 5.5A 8SOIC |
| FDS6930B | MOSFET N-CH DUAL 30V 5.5A 8-SOIC |
| FDS6961A_F011 | MOSFET N-CH DUAL 30V 3.5A 8SOIC |
| FDS6975 | MOSFET P-CH DUAL 30V 6A 8SOIC |
| FDS6982AS | MOSFET N-CH DUAL 30V SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6912_0007 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6912A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6912A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6912A_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6912A_Q | 功能描述:MOSFET Dual N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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