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| 型号： | FDS6930A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 5.5A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 460pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS6930ADKR |
October 1998
FDS6930A
Dual N-Channel, Logic Level, PowerTrench TM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Features
5.5 A, 30 V. R DS(ON) = 0.040 ? @ V GS = 10 V
R DS(ON) = 0.055 ? @ V GS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
R DS(ON) .
High power and current handling capability.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
FD 0A
69
S1
D2
D1
D1
SO-8
D2
S
3
pin 1
G1
S2
G2
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
FDS6930A
30
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
5.5
A
- Pulsed
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
2
1.6
W
W
(Note 1b)
(Note 1c)
1
0.9
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
? 1998 Fairchild Semiconductor Corporation
FDS6930A Rev.D
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6930B | MOSFET N-CH DUAL 30V 5.5A 8-SOIC |
| FDS6961A_F011 | MOSFET N-CH DUAL 30V 3.5A 8SOIC |
| FDS6975 | MOSFET P-CH DUAL 30V 6A 8SOIC |
| FDS6982AS | MOSFET N-CH DUAL 30V SO-8 |
| FDS6984AS | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6930A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6930A_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6930B | 功能描述:MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6930B | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, SOIC |
| FDS6930B_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench?? MOSFET |
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