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参数资料
| 型号： | FDS6984AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A，8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 420pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS6984ASFSDKR |
J
May 2008
FDS6984AS
Dual Notebook Power Supply N-Channel PowerTrench ? SyncFET ?
General Description
Features
The FDS6984AS is designed to replace two single
SO-8 MOSFETs and Schottky diode in synchronous
?
Q2 :
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench
8.5A, 30V
R DS(on) max= 20 m ? @ V GS = 10V
R DS(on) max= 28 m ? @ V GS = 4.5V
MOSFETs designed to maximize power conversion
efficiency.
?
Q1 :
Optimized for low switching losses
Low gate charge (8nC typical)
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes a patented combination of a
5.5A, 30V
R DS(on) max= 31 m ? @ V GS = 10V
R DS(on) max= 40 m ? @ V GS = 4.5V
MOSFET monolithically integrated with a Schottky
diode.
D1
?
RoHS Compliant
D1
5
4
D2
D2
6
Q1
3
7
2
SO-8
S2
G2
S1
G1
8
Q2
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q2
30
± 20
Q1
30
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
8.5
5.5
A
- Pulsed
30
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering I nformation
Device Marking
FDS6984AS
Device
FDS6984AS
Reel Size
13”
Tape width
12mm
Quantity
2500 units
? 200 8 Fairchild Semiconductor Corporation
FDS6984AS Rev A 1 (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6986AS | MOSFET N-CH DUAL 30V 8SOIC |
| FDS6990AS | MOSFET NCH DUAL 30V 7.5A 8SOIC |
| FDS6990A | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6994S | MOSFET N-CH DUAL 30V 8SOIC |
| FDS8433A | MOSFET P-CH 20V 5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6984AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6984S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6984S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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