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| 型号： | FDS6990AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET NCH DUAL 30V 7.5A 8SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS6990ASDKR |
M
March 2010
FDS6990AS
Dual 30V N - Channel PowerTrench ? SyncFET?
Features
■ 7.5 A, 30 V. R DS(ON) = 22 m ? @ V GS = 10 V
R DS(ON) = 28 m ? @ V GS = 4.5 V
■ Includes SyncFET Schottky diode
■ Low gate charge (10nC typical)
■ High performance trench technology for extremely low
R DS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
■ Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version ef?ciency, providing a low R DS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous recti?er is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D2
D1
D1
5
Q1
4
D2
6
3
SO-8
Pin 1
S2
G2
S1
G1
7
8
Q2
2
1
Absolute Maximum Ratings T A =25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
7.5
A
– Pulsed
20
P D
T J , T STG
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
–55 to +150
W
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS6990AS
?20 10 Fairchild Semiconductor Corporation
Device
FDS6990AS
Reel Size
13"
1
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS6990AS Rev. A2
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6990A | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6994S | MOSFET N-CH DUAL 30V 8SOIC |
| FDS8433A | MOSFET P-CH 20V 5A 8-SOIC |
| FDS8447 | MOSFET N-CH 40V 12.8A 8-SOIC |
| FDS8449_F085 | MOSFET N-CH 40V 7.6A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6990AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6990S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6993 | 功能描述:MOSFET Dual PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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