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| 型号： | FDS6990AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET NCH DUAL 30V 7.5A 8SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS6990ASDKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coef?cient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V GS = 0 V, I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
30
31
500
± 100
V
mV/ ° C
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coef?cient
Static Drain–Source
On–Resistance
V DS = V GS , I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
V GS = 10 V, I D = 7.5 A
V GS = 10 V, I D = 7.5 A, T J = 125 ° C
1
1.7
–3
17
26
3
22
35
V
mV/ ° C
m ?
V GS = 4.5 V, I D = 6.5 A
21
28
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 15 V, I D = 10 A
20
29
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
V GS = 15 mV, f = 1.0 MHz
550
162
60
3.1
pF
pF
pF
?
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs = 10V
Total Gate Charge at Vgs = 5V
Gate–Source Charge
Gate–Drain Charge
V DS = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 15 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DD = 15 V, I D = 10 A, V GS = 5 V
8
5
24
4
9
8
14
5
10
6
1.5
2.0
16
10
38
8
18
16
24
10
14
8
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.9
A
V SD
Drain–Source Diode Forward
V GS = 0 V, I S = 2.3 A
(Note 2)
0.6
0.7
V
Voltage
t rr
Diode Reverse Recovery Time
I F = 10A,
18
nS
Q rr
Diode Reverse Recovery Charge
d iF /d t = 300 A/μs
(Note 3)
11
nC
FDS6990AS Rev. A 2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6990AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6990S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6993 | 功能描述:MOSFET Dual PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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