参数资料
型号: FDS8433A
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 20V 5A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 47 毫欧 @ 5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 5V
输入电容 (Ciss) @ Vds: 1130pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS8433ADKR
September 2000
FDS8433A
Single P-Channel 2.5V Specified MOSFET
General Description
Features
This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.
Applications
?
Load switch
?
DC/DC converter
?
Battery protection
?
?
?
?
-5 A, -20 V. R DS(on) = 0.047 ? @ V GS = -4.5 V
R DS(on) = 0.070 ? @ V GS = -2.5 V
Fast switching speed.
High density cell design for extremely low R DS(on) .
High power and current handling capability.
D
D
5
4
D
D
6
7
3
2
SO-8
S
S
S
G
8
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
FDS8433A
-20
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
-5
A
- Pulsed
-50
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
FDS8433A
Device
FDS8433A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
? 2000 Fairchild Semiconductor International
FDS8433A Rev. C
相关PDF资料
PDF描述
FDS8447 MOSFET N-CH 40V 12.8A 8-SOIC
FDS8449_F085 MOSFET N-CH 40V 7.6A 8-SOIC
FDS8449 MOSFET N-CH 40V 7.6A 8-SOIC
FDS86106 MOSFET N-CH 100V 3.4A 8-SOIC
FDS86140 MOSFET N-CH 100V 11.2A 8SOIC
相关代理商/技术参数
参数描述
FDS8433A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
FDS8433A_00 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET
FDS8447 功能描述:MOSFET 40V Single N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS8447-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS8447 Series N-Channel 40 V 10.5 mOhm PowerTrench Mosfet - SOIC-8
FDS8449 功能描述:MOSFET 40V N-Ch UltraFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube