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参数资料
| 型号： | FDS6984AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A，8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 420pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS6984ASFSDKR |
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
(Note 2)
t d(on)
Turn-On Delay Time
Q2
8
16
ns
Q1
9
18
t r
t d(off)
t f
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 15 V, I D = 1 A,
V GS = 10V, R GEN = 6 ?
Q2
Q1
Q2
Q1
Q2
5
6
23
22
4
10
12
37
35
8
ns
ns
ns
Q1
2
4
t d(on)
Turn-On Delay Time
Q2
9
18
ns
Q1
10
19
t r
t d(off)
t f
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 15 V, I D = 1 A,
V GS = 4.5V, R GEN = 6 ?
Q2
Q1
Q2
Q1
Q2
7
11
13
13
4
14
20
24
24
8
ns
ns
ns
Q1
3
6
Q g(TOT)
Total Gate Charge, Vgs = 10V
Q2
10
14
nC
Q g
Q gs
Q gd
Total Gate Charge, Vgs = 5V
Gate-Source Charge
Gate-Drain Charge
Q2:
V DS = 15 V, I D = 8.5 A
Q1:
V DS = 15 V, I D = 5.5 A
Q1
Q2
Q1
Q2
Q1
Q2
8
5
4
1.5
1.3
1.9
11
8
6
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
Q1
1.5
I S
Maximum Continuous Drain-Source Diode Forward Current
Q2
3.0
A
Q1
1.3
t rr
Q rr
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I F = 10A,
dI F /dt = 300 A/μs
I F = 5.5A,
dI F /dt = 100 A/μs
(Note 3)
(Note 3)
Q2
Q1
13
6
17
6
ns
nC
ns
nC
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 2.3 A
V GS = 0 V, I S = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
0.6
0.8
0.7
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
78°C/W when
b)
125°C/W when
c)
135°C/W when
mounted on a
0.5in 2 pad of 2
oz copper
mounted on a
0.02 in 2 pad of
2 oz copper
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. See “SyncFET Schottky body diode characteristics” below.
3. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS6984AS Rev A 1 (X)
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6986AS | MOSFET N-CH DUAL 30V 8SOIC |
| FDS6990AS | MOSFET NCH DUAL 30V 7.5A 8SOIC |
| FDS6990A | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6994S | MOSFET N-CH DUAL 30V 8SOIC |
| FDS8433A | MOSFET P-CH 20V 5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6984AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6984S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6984S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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