参数资料
型号: FDS6982AS
厂商: Fairchild Semiconductor
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V SO-8
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.3A,8.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 28 毫欧 @ 6.3A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 10V
输入电容 (Ciss) @ Vds: 610pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: SO-8
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS6982ASDKR
May 200 8
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6982AS
? ?
tm M
General Description
Features
The FDS6982AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET
technology.
Applications
? Notebook
D1
?
?
?
?
Q2 : Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A, 30V R DS(on) max= 13.5m ? @ V GS = 10V
R DS(on) max= 16.5m ? @ V GS = 4.5V
Low gate charge (21nC typical)
Q1 : Optimized for low switching losses
6.3A, 30V R DS(on) max= 2 8 .0m ? @ V GS = 10V
R DS(on) max= 35 .0m ? @ V GS = 4.5V
Low gate charge (11nC typical)
D1
5
4
D2
D2
6
Q1
3
7
2
SO-8
S2
G2
S1
G1
8
Q2
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q2
30
± 20
Q1
30
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
8.6
6.3
A
- Pulsed
30
20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering I nformation
Device Marking
FDS6982AS
Device
FDS6982AS
Reel Size
13”
Tape width
12mm
Quantity
2500 units
? 200 8 Fairchild Semiconductor Corporation
FDS6982AS Rev B 1
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相关代理商/技术参数
参数描述
FDS6982AS 制造商:Fairchild Semiconductor Corporation 功能描述:mOSFET
FDS6982AS_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6982AS_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench㈢ SyncFET⑩
FDS6982AS_NF40 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6982AS_NL 功能描述:MOSFET N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube