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参数资料
| 型号： | FDS6982AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V SO-8 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A，8.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 6.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 610pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS6982ASDKR |
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ Max Units
Switching Characteristics
(Note 2)
Q g (TOT)
Q g
Q gs
Q gd
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Q2:
V DS = 15 V, I D = 11.5A
Q1:
V DS = 15 V, I D = 6.3A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
21
11
12
6
3.1
1.8
3.6
2.4
30
15
16
9
nC
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
d iF /d t = 300 A/μs (Note 3)
I S
T rr
Q rr
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time I F = 11.5 A,
Reverse Recovery Charge
Q2
Q1
Q2
19
12
3.0
1.3
A
ns
nC
T rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 6.3 A,
d iF /d t = 100 A/μs
(Note 3)
Q1
20
9
ns
nC
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 3 A
V GS = 0 V, I S = 6 A
V GS = 0 V, I S = 1.3 A
(Note 2)
(Note 2)
(Note 2)
Q2
Q2
Q1
0.5
0.6
0.8
0.7
1.0
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
0.5in pad of 2
a)
78°C/W when
mounted on a
2
oz copper
b)
125°C/W when
mounted on a
0.02 in 2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4
5
FDS6982AS Rev B 1
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PDF描述 |
|---|---|
| FDS6984AS | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
| FDS6986AS | MOSFET N-CH DUAL 30V 8SOIC |
| FDS6990AS | MOSFET NCH DUAL 30V 7.5A 8SOIC |
| FDS6990A | MOSFET N-CH DUAL 30V 7.5A 8SOIC |
| FDS6994S | MOSFET N-CH DUAL 30V 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6982AS | 制造商:Fairchild Semiconductor Corporation 功能描述:mOSFET |
| FDS6982AS_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6982AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6982AS_NF40 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6982AS_NL | 功能描述:MOSFET N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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