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参数资料
| 型号： | FDS6984AS_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| 中文描述： | 5500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 150K |
| 代理商： | FDS6984AS_NL |
FDS6984AS Rev A (X)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
I
DSS
Zero Gate Voltage Drain
Current
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
All
30
30
V
500
1
±
100
μ
A
2.3
79
mA
nA
nA
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125
°
C
I
GSS
Gate-Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 uA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 8.5 A
V
GS
= 10 V, I
D
= 8.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 4.6 A
V
GS
= 10 V, V
DS
= 5 V
Q2
Q1
Q2
Q1
Q2
1
1
1.7
1.8
–3
–4
17
24
21
26
34
32
3
3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
20
32
28
31
43
40
Q1
m
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
S
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 8.5 A
V
DS
= 5 V, I
D
= 5.5 A
25
18
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
530
420
170
120
60
50
3.1
2.2
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
R
G
Gate Resistance
V
GS
= 15mV, f = 1.0 MHz
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6984AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6984SQ1 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6986S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6984S | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6984S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6984S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6984SQ1 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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