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参数资料
| 型号： | FDS7088N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 21 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 190K |
| 代理商： | FDS7088N3 |
2004 Fairchild Semiconductor Corporation
FDS7088SN3 Rev B (W)
FDS7088SN3
30V N
-
Channel PowerTrench
SyncFET
August 2004
General Description
The FDS7088SN3 is designed to replace a single SO-8
FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. The FDS7088SN3
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS7088SN3 as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS7088N3 in parallel with a Schottky diode.
Applications
DC/DC converter
Motor drives
Features
21 A, 30 V
R
DS(ON)
= 4.0 m
@ V
GS
= 10 V
R
DS(ON)
= 4.9 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
21
60
3.0
1.7
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7088SN3
FDS7088SN3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7088N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7088N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088SN3 | 功能描述:MOSFET 30V N-Chnl PwrTernch SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7088SN3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7096N | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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