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参数资料
| 型号： | FDS7096N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 14 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 169K |
| 代理商： | FDS7096N3 |
January 2004
2004 Fairchild Semiconductor Corporation
FDS7096N3 Rev E2 (W)
FDS7096N3
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Load switch
Features
14 A, 30 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
14
60
3.0
1.5
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7096N3
FDS7096N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS7096N | 30V N-Channel PowerTrench MOSFET |
| FDS7098N3 | 30V N-Channel PowerTrench MOSFET |
| FDS7288N3 | 30V N-Channel PowerTrench MOSFET |
| FDS7296N3 | 30V N-Channel PowerTrench MOSFET |
| FDS7760A | N-Channel Logic Level PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7098N3 | 功能描述:MOSFET 30V NCH SINGLE SO8 FMP PwR TRNCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7288N3 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7288N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7296N3 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7760A | 功能描述:MOSFET N-Ch Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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