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参数资料
| 型号： | FDS7760A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 205K |
| 代理商： | FDS7760A |
February 2000
PRELIMINARY
1999 Fairchild Semiconductor Corporation
FDS7760A Rev. B (W)
FDS7760A
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
advanced
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
15 A, 30 V. R
DS(ON)
= 5.5 m
@ V
GS
= 10 V
R
DS(ON)
= 8 m
@ V
GS
= 4.5 V.
Low gate charge (37nC typical)
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
20
15
60
2.5
1.2
1
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Outlines and Ordering Information
Device Marking
Device
FDS7760A
FDS7760A
(Note 1a)
50
°
C/W
°
C/W
°
C/W
(Note 1c)
50 (10 sec)
30
(Note 1)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7760A_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7764A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7764A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 15A SO-8 |
| FDS7764A_F041 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7764A_L86Z | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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