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参数资料
| 型号： | FDS7766 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 17000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 121K |
| 代理商： | FDS7766 |
March 2003
2003 Fairchild Semiconductor Corporation
FDS7766 Rev E (W)
FDS7766
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
17 A, 30 V
R
DS(ON)
= 5 m
@ V
GS
= 10 V
R
DS(ON)
= 6 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
17
60
2.5
1.2
1.0
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7766
FDS7766
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS7788 | 30V N-Channel PowerTrench MOSFET |
| FDS8333C | 30V N & P-Channel PowerTrench MOSFETs |
| FDS8433 | Single P-Channel 2.5V Specified MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7766S | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS7779Z | 功能描述:MOSFET 30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7788 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7788 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS7788_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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