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参数资料
| 型号： | FDS8333C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 134K |
| 代理商： | FDS8333C |
August 2002
2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
FDS8333C
30V N & P-Channel PowerTrench
ò
MOSFETs
General Description
These
produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
N
&
P-Channel
MOSFETs
are
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
Q1
4.1 A, 30V. R
DS(ON)
= 80 m
@ V
GS
= 10 V
R
DS(ON)
= 130 m
@ V
GS
= 4.5 V
Q2
–3.4 A, 30V. R
DS(ON)
= 130 m
@ V
GS
= –10 V
R
DS(ON)
= 200 m
@ V
GS
= –4.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
High power and handling capability in a widely used
surface mount package.
S
D
SO-8
D
D
G
D1
D1
D2D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Q1
30
±
16
4.1
20
Q2
–30
±
20
–3.4
–20
Units
V
A
(Note 1a)
2
(Note 1a)
(Note 1b)
1.6
1
0.9
P
D
(Note 1c)
W
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS8333C
FDS8333C
(Note 1a)
78
40
°
C/W
(Note 1)
Reel Size
7’’
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8433 | Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | Single P-Channel 2.5V Specified MOSFET |
| FDS8670 | 30V N-Channel PowerTrench MOSFET |
| FDS8870 | N-Channel PowerTrench MOSFET |
| FDS8870_NL | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS8333C_Q | 功能描述:MOSFET N & PCh PowerTrench 3V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
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