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参数资料
| 型号： | FDS8333C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 134K |
| 代理商： | FDS8333C |
FDS8333C Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Voltage
t
rr
Time
Q
rr
Charge
Q1
Q2
Q1
Q2
Q1
Q2
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= –1.3 A
I
F
= 4.1 A, d
iF
/d
t
= 100 A/μs
I
F
= –3.4 A, d
iF
/d
t
= 100 A/μs
I
F
= 4.1 A, d
iF
/d
t
= 100 A/μs
I
F
= –3.4 A, d
iF
/d
t
= 100 A/μs
(Note 2)
0.8
0.8
16.3
14.5
26.7
21.1
1.2
–1.2
Drain–Source Diode Forward
(Note 2)
V
Diode Reverse Recovery
nS
Diode Reverse Recovery
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
2
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8433 | Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | Single P-Channel 2.5V Specified MOSFET |
| FDS8670 | 30V N-Channel PowerTrench MOSFET |
| FDS8870 | N-Channel PowerTrench MOSFET |
| FDS8870_NL | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS8333C_Q | 功能描述:MOSFET N & PCh PowerTrench 3V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
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