参数资料
型号: FDS8870
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 18 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 1/12页
文件大小: 259K
代理商: FDS8870
April 2005
F
2005 Fairchild Semiconductor Corporation
FDS8870 Rev. A3
www.fairchildsemi.com
1
FDS8870
N-Channel PowerTrench
MOSFET
30V, 18A, 4.2m
Features
r
DS(ON)
= 4.2m
, V
GS
= 10V, I
D
= 18A
r
DS(ON)
= 4.9m
, V
GS
= 4.5V, I
D
= 17A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8
相关PDF资料
PDF描述
FDS8870_NL N-Channel PowerTrench MOSFET
FDS8874 N-Channel PowerTrench MOSFET
FDS8876 N-Channel PowerTrench MOSFET
FDS8876_NL N-Channel PowerTrench MOSFET
FDS8878 N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
FDS8870_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDS8870_NL 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDS8874 功能描述:MOSFET 30V 16A 5.5 OHMS NCH SINGLE S RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS8874_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDS8876 功能描述:MOSFET 30V 12.5A 8.2 OHMS NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube