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参数资料
| 型号： | FDS8870 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 18 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/12页 |
| 文件大小： | 259K |
| 代理商： | FDS8870 |
F
FDS8870 Rev. A3
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
18
17
A
A
A
mJ
W
Figure 4
420
2.5
20
-55 to 150
E
AS
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
C/W
o
C/W
Device Marking
FDS8870
FDS8870
Device
FDS8870
Package
SO-8
SO-8
Reel Size
330mm
330mm
Tape Width
12mm
12mm
Quantity
2500 units
2500 units
FDS8870_NL (Note 4)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 18A, V
GS
= 10V
I
D
= 17A, V
GS
= 4.5V
I
D
= 18A, V
GS
= 10V,
T
A
= 150
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0035
0.0039
0.0042
0.0049
-
0.0055
0.0072
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
4615
900
450
2.0
85
45
4.6
11
6.4
15
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
0.5
-
-
-
-
-
-
3.5
112
62
6.0
-
-
-
V
DD
= 15V
I
D
= 18A
I
g
= 1.0mA
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相关代理商/技术参数 |
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|---|---|
| FDS8870_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8870_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8874 | 功能描述:MOSFET 30V 16A 5.5 OHMS NCH SINGLE S RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8874_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8876 | 功能描述:MOSFET 30V 12.5A 8.2 OHMS NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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