- 您现在的位置：买卖IC网 > PDF目录375784 > FDS8333C (FAIRCHILD SEMICONDUCTOR CORP) 30V N & P-Channel PowerTrench MOSFETs PDF资料下载
参数资料
| 型号： | FDS8333C |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 134K |
| 代理商： | FDS8333C |
FDS8333C Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= 250
μ
A,Ref. to 25
°
C
I
D
= –250
μ
A,Ref. to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V
V
GS
=
±
16 V, V
DS
= 0 V
V
GS
=
±
20V , V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
30
–30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
25
–22
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
1
–1
±
100
±
100
μ
A
nA
nA
I
GSSF
/I
GSSR
Gate–Body Leakage, Forward
I
GSSF
/I
GSSR
Gate–Body Leakage, Reverse
On Characteristics
V
GS(th)
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
Q1
Q2
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= 250
μ
A,Ref. To 25
°
C
I
D
= –250
μ
A,Ref. to 25
°
C
V
GS
= 10 V, I
D
= 4.1 A
V
GS
= 4.5 V, I
= 3.2 A
V
GS
= 10 V, I
D
= 4.1 A T
J
=125
°
C
V
GS
= –10 V, I
D
= –3.4 A
V
GS
= – 4.5 V, I
D
= –2.5 A
V
GS
= –10V,I
D
= –3.4A, T
J
=125
°
C
V
GS
= 10 V, V
DS
= 5 V
V
GS
= –10 V, V
DS
= –5 V
V
DS
= 5 V
I
D
= 4.1 A
V
DS
= –5 V
I
D
= –3.4A
1
–1
1.7
–1.8
–4.2
3.7
67
81
103
105
167
147
3
–3
Gate Threshold Voltage
V
Gate Threshold Voltage
Q1
Q2
mV/
°
C
Q1
80
130
145
130
200
220
Q2
m
I
D(on)
g
FS
Q1
Q2
Q1
Q2
10
–5
On–State Drain Current
A
9
5
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
V
GS
= 15 mV, f=1.0MHz
V
GS
=–15 mV, f=1.0MHz
282
185
49
56
20
26
2.3
–9.6
Input Capacitance
pF
Output Capacitance
pF
Reverse Transfer Capacitance
pF
Gate Resistance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
4.5
4.5
6
13
19
11
1.5
2
4.7
4.1
0.9
0.8
0.6
0.4
9
9
12
23
34
20
3
4
6.6
5.7
Turn–On Delay Time
ns
Turn–On Rise Time
ns
Turn–Off Delay Time
ns
Turn–Off Fall Time
For
Q1
:
V
DS
=10 V,
V
GS
= 4.5 V, R
GEN
= 6
I
DS
= 1 A
For
Q2
:
V
DS
=–10 V, I
DS
= –1 A
V
GS
= –4.5 V, R
GEN
= 6
ns
Total Gate Charge
nC
Gate–Source Charge
nC
Gate–Drain Charge
For
Q1
:
V
DS
=10 V,
V
GS
= 4.5 V, R
GEN
= 6
For
Q2
:
V
DS
=–10 V, I
DS
= –3.4 A
V
GS
= –4.5 V,
I
DS
= 4.1 A
nC
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8433 | Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | Single P-Channel 2.5V Specified MOSFET |
| FDS8670 | 30V N-Channel PowerTrench MOSFET |
| FDS8870 | N-Channel PowerTrench MOSFET |
| FDS8870_NL | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS8333C_Q | 功能描述:MOSFET N & PCh PowerTrench 3V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET |
| FDS8433A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8433A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
发布紧急采购，3分钟左右您将得到回复。