参数资料
型号: FDS7788
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 18000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 1/5页
文件大小: 148K
代理商: FDS7788
February 2004
2004 Fairchild Semiconductor Corporation
FDS7788 Rev E (W)
FDS7788
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Load switch
Motor drives
Features
18 A, 30 V. R
DS(ON)
= 4.0 m
@ V
GS
= 10 V
R
DS(ON)
= 5.0 m
@ V
GS
= 4.5 V
Low gate charge
Fast switching speed
High power and current handling capability
High performance trench technology for extremely
low R
DS(ON)
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±20
18
50
2.5
1.2
1.0
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
30
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7788
FDS7788
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数
参数描述
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