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参数资料
| 型号： | FDS7764S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 13500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 127K |
| 代理商： | FDS7764S |
September 2002
2002 Fairchild Semiconductor Corporation
FDS7764S Rev D (W)
FDS7764S
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDS7764S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS7764S includes
an
integrated
Schottky
monolithic SyncFET technology.
diode
using
Fairchild’s
Applications
DC/DC converter
Motor drives
Features
13.5 A, 30 V. R
DS(ON)
= 7.5 m
@ V
GS
= 10 V
R
DS(ON)
= 9.0 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (25 nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
13.5
50
2.5
1.2
1.0
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
30
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7764S
FDS7764S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
SO8
相关PDF资料 |
PDF描述 |
|---|---|
| FDS7766S | 30V N-Channel PowerTrench MOSFET |
| FDS7766 | 30V N-Channel PowerTrench MOSFET |
| FDS7779Z | 30 Volt P-Channel PowerTrench MOSFET |
| FDS7788 | 30V N-Channel PowerTrench MOSFET |
| FDS8333C | 30V N & P-Channel PowerTrench MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7764S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7766 | 功能描述:MOSFET 30V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7766S | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS7779Z | 功能描述:MOSFET 30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7788 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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