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参数资料
| 型号： | FDS7288N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 20 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 174K |
| 代理商： | FDS7288N3 |
February 2004
FDS7288N3
30V N-Channel PowerTrench
MOSFET
2004 Fairchild Semiconductor Corporation
FDS7288N3 Rev C1 (W)
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low R
DS(ON)
and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for both
high and low side switch applications in Point of Load
converters.
Applications
Secondary side Synchronous rectifier
Synchronous Buck VRM and POL Converters
Features
20.5 A, 30 V
R
DS(ON)
= 4.5 m
@ V
GS
= 10 V
R
DS(ON)
= 5.6 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low Qg and Rg for fast switching
SO-8 FLMP for enhanced thermal performance in an
industry-standard package outline.
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
20
60
3.0
1.5
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7288N3
FDS7288N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7288N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS7296N3 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7760A | 功能描述:MOSFET N-Ch Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7760A_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7764A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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