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参数资料
| 型号： | FDS8433 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single P-Channel 2.5V Specified MOSFET |
| 中文描述： | 单P沟道MOSFET的2.5V的指定 |
| 文件页数： | 2/8页 |
| 文件大小： | 196K |
| 代理商： | FDS8433 |
F
FDS8433A Rev. B1
DMOS Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
Breakdown Voltage Temperature
-25
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.6
4
-1
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -5 A
V
GS
= -4.5 V, I
D
= -5 A, T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -4.3 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -5 A
0.036
0.050
0.047
0.045
0.085
0.070
A
S
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-25
16
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1130
480
120
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
8
23
260
90
20
2.8
3.2
16
37
360
125
28
ns
ns
ns
ns
nC
nC
nC
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -5 V, I
D
= -5 A,
V
GS
= -5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-2.1
-1.2
A
V
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.8
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 50
°
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
°
C/W when mounted
on a 0.006 in
2
pad
of 2 oz. copper.
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