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| 型号： | FDS86141 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 7A 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 934pF @ 50V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS86141DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV DSS
? BV DS S
???? T J
I DSS
I GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
I D = 250 ? A, V GS = 0 V
I D = 250 ? A, referenced to 25°C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
67
1
±100
V
mV/°C
? A
nA
On Characteristics
V GS(th)
?? V GS(th)
???? T J
Gate-to-Source Threshold Voltage
Gate-to-Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 ? A
I D = 250 ? A, Referenced to 25°C
2
3.1
-10
4
V
mV/°C
V GS = 10 V, I D = 7 A
19
23
r DS(on)
Static Drain to Source On Resistance
V GS = 6 V, I D = 5.5 A
27
37
m ?
V GS = 10 V, I D = 7 A, T J = 125°C
33
40
g FS
Forward Transconductance
V DS = 10 V, I D = 7 A
19
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1 MHz
703
186
8.6
0.5
934
247
13
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
8.3
17
ns
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 50 V, I D = 7 A,
V GS = 10 V, R GEN = 6 ?
3.2
14.3
3.2
10
26
10
ns
ns
ns
Q g(TOT)
Q gs
Total Gate Charge
Total Gate Charge
Total Gate Charge
V GS = 0 V to 10 V
V GS = 0 V to 5 V
V DD = 50 V
I D = 7 A
11.8
6.7
3.4
16.5
9.4
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
3.1
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source-to-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 7 A
V GS = 0 V, I S = 2 A
I F = 7 A, di/dt = 100 A/ ? s
(Note 2)
(Note 2)
0.8
0.8
43
39
1.3
1.2
69
62
V
ns
nC
NOTES:
1. R ? JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R ? JC is guaranteed by design while R ? CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ? s, Duty Cycle < 2.0 %.
3. Starting T J = 25 o C; N-ch: L = 3 mH, I AS = 9 A, V DD = 100 V, V GS = 10 V.
b) 125 °C/W when mounted on a
minimum pad.
? 2007 Fairchild Semiconductor Corporation
FDS86141 ? Rev. C4
2
www.fairchildsemi.com
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