- 您现在的位置：买卖IC网 > Datasheet目录427 > FDS8672S (Fairchild Semiconductor)MOSFET N-CH 30V 18A 8-SOIC Datasheet资料下载
参数资料
| 型号： | FDS8672S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 18A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2670pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8672SDKR |
December 2007
N-Channel PowerTrench SyncFET
FDS8672S
30V, 18A, 4.8m ?
?
?
tm
Features
Max r DS(on) = 4.8m ? at V GS = 10V, I D = 18A
Max r DS(on) = 7.0m ? at V GS = 4.5V, I D = 15A
Includes SyncFET Schottky body diode
High performance trench technology for extremely low r DS(on)
and fast switching
High power and current handling capability
100% R g (Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
D
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low r DS(on) and low gate charge. The FDS8672S
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
D
D
5
4
G
D
D
D
D
6
7
3
2
S
S
SO-8
S
G
D
8
1
S
S
Pin 1
S
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
I D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
Ratings
30
±20
18
80
Units
V
V
A
E AS
Single Pulse Avalanche Energy
(Note 3)
216
mJ
P D
Power Dissipation
Power Dissipation
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1b)
2.5
1.0
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
25
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS8672S
Device
FDS8672S
Package
SO8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8690 | MOSFET N-CH 30V 14A 8-SOIC |
| FDS8813NZ | MOSFET N-CH 30V 18.5A 8-SOIC |
| FDS8817NZ | MOSFET N-CH 30V 15A 8-SOIC |
| FDS8840NZ | MOSFET N-CH 40V 18.6A 8-SOIC |
| FDS8842NZ | MOSFET N-CH 40V 14.9A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8690 | 功能描述:MOSFET 30V 14A 7.6 OHM NCH POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8812NZ | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8812NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD SO-8 |
| FDS8813NZ | 功能描述:MOSFET 30 Volt N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8817NZ | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。