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| 型号： | FDS8840NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 18.6A 8-SOIC |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 18.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 18.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 144nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7535pF @ 20V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS8840NZDKR |
April 2009
FDS8840NZ
N-Channel PowerTrench ? MOSFET
40 V, 18.6 A, 4.5 m ?
Features
Max r DS(on) = 4.5 m ? at V GS = 10 V, I D = 18.6 A
Max r DS(on) = 6.0 m ? at V GS = 4.5 V, I D = 14.9 A
HBM ESD protection level of 6 kV typical(note 3)
High performance trench technology for extremely low r DS(on)
General Description
The FDS8840NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r DS(on) while maintaining excellent switching performance.
Applications
and fast switching
Synchronous Buck for Vcore and Server
High power and current handling capability
Termination is Lead-free and RoHS Compliant
D
Notebook Battery Pack
Load Switch
D
D
D
D
D
G
S
SO-8
S
S
G
D
D
S
S
Pin 1
S
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
I D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
Ratings
40
±20
18.6
63
Units
V
V
A
E AS
Single Pulse Avalanche Energy
(Note 4)
600
mJ
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
2.5
1.0
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
25
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS8840NZ
Device
FDS8840NZ
Package
SO8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
?2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8842NZ | MOSFET N-CH 40V 14.9A 8SOIC |
| FDS8858CZ | MOSFET DUAL N/P-CHAN 30V SO-8 |
| FDS8870 | MOSFET N-CH 30V 18A 8SOIC |
| FDS8876 | MOSFET N-CH 30V 12.5A 8SOIC |
| FDS8878 | MOSFET N-CH 30V 10.2A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8842NZ | 功能描述:MOSFET 40V NCh PowerTrench w/MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8858CZ | 功能描述:MOSFET 30V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8870 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8870_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8870_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
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