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参数资料
| 型号： | FDS8840NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 18.6A 8-SOIC |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 18.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 18.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 144nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7535pF @ 20V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS8840NZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 32 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
40
31
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
1.8
-6
3.0
V
mV/°C
V GS = 10 V, I D = 18.6 A
3.9
4.5
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 14.9 A
4.6
6.0
m ?
V GS = 10 V, I D = 18.6 A, T J =125 °C
5.9
7.0
g FS
Forward Transconductance
V DS = 5 V, I D = 18.6 A
83
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20 V, V GS = 0 V,
f = 1 MHz
5665
650
445
1.2
7535
865
670
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 20 V, I D = 18.6 A,
V GS = 10 V, R GEN = 6 ?
18
13
57
11
32
23
103
20
ns
ns
ns
ns
Q g
Q g
Q gs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 10 V
V GS = 0 V to 5 V
V DD = 20 V,
I D = 18.6 A
103
54
16
144
76
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
19
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 18.6 A
V GS = 0 V, I S = 2.1 A
I F = 18.6 A, di/dt = 100 A/ μ s
0.8
0.7
33
21
1.2
1.2
53
34
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T J = 25 °C, L = 3 mH, I AS = 20 A, V DD = 40 V, V GS = 10 V.
b) 125 °C/W when mounted on a
minimum pad.
?2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
2
www.fairchildsemi.com
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