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| 型号： | FDS8858CZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N/P-CHAN 30V SO-8 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.6A，7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17 毫欧 @ 8.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1205pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS8858CZDKR |
October 2011
FDS8858CZ
Dual N & P-Channel PowerTrench ? MOSFET
N-Channel: 30V, 8.6A, 17.0m Ω P-Channel: -30V, -7.3A, 20.5m Ω
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
mode power
Max r DS(on) = 17m Ω at V GS = 10V, I D = 8.6A
Max r DS(on) = 20m Ω at V GS = 4.5V, I D = 7.3A
Q2: P-Channel
Max r DS(on) = 20.5m Ω at V GS = -10V, I D = -7.3A
Max r DS(on) = 34.5m Ω at V GS = -4.5V, I D = -5.6A
High power and handing capability in a widely used surface
mount package
MOSFETs are produced using Fairchild Semiconductor ’s
advanced PowerTrench process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Applications
Fast switching speed
Inverter
Synchronous Buck
D2
D2
D2
5
Q2
4
G2
D1
D1
D2
6
3
S2
SO-8
Pin 1
S1
G1
S2
G2
D1
D1
7
8
Q1
2
1
G1
S1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Q1
30
±20
Q2
-30
±25
Units
V
V
I D
Drain Current
- Continuous
- Pulsed
T A = 25°C
8.6
20
-7.3
-20
A
E AS
Single Pulse Avalanche Energy
(Note 3)
50
11
mJ
Power Dissipation for Dual Operation
2.0
P D
Power Dissipation for Single Operation
T A = 25°C
(Note 1a)
1.6
W
T A = 25°C
(Note 1c)
0.9
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
40
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS8858CZ
Device
FDS8858CZ
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
?2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8870 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8870_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8870_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8874 | 功能描述:MOSFET 30V 16A 5.5 OHMS NCH SINGLE S RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8874_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
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