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参数资料
| 型号： | FDS8670 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 21 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 118K |
| 代理商： | FDS8670 |
FDS8670 Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
V
GS
= ±16 V,
V
DS
= 0 V
I
D
= 250 μA
30
V
39
mV/
°
C
μA
nA
1
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 21 A
V
GS
= 4.5 V,
I
D
= 18 A
V
GS
=10 V, I
D
=21 A, T
J
=125
°
C
V
DS
= 10 V,
I
D
= 21 A
I
D
= 250 μA
1
1.4
3
V
–5
mV/
°
C
m
3.3
4.2
4.4
3.7
5.0
5.5
g
FS
Forward Transconductance
118
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
4040
1730
160
0.9
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
f = 1.0 MHz
0.2
1.5
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge at V
GS
= 10V
Q
g(TOT)
Total Gate Charge at V
GS
= 5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
11
56
68
58.5
30
9.5
5.5
21
20
90
108
82
42
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V, I
D
= 21 A
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
I
RM
Diode Reverse Recovery Current
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 21 A,
dI
F
/dt = 100 A/μs
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
51
1.5
37
ns
A
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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